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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3062
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
5 ORDERING INFORMATION PART NUMBER 2SK3062 2SK3062-S 2SK3062-ZJ 2SK3062-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD
DESCRIPTION
The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
* Low on-state resistance RDS(on)1 = 8.5 m MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 m MAX. (VGS = 4.0 V, ID = 35 A) * Low Ciss: Ciss = 5200 pF TYP. * Built-in gate protection diode
Notes TO-220SMD package is produced only in Japan
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (Pulse)
Note1
(TO-220AB) 60 20 +20, -10 70 280 100 1.5 150 -55 to +150 35 122.5 V V V A A W W C C A mJ (TO-262)
VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty cycle 1 % 2. Starting Tch = 25 C, VDD = 30 V, RG = 25 , VGS = 20 0 V (TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13101EJ2V0DS00 (2nd edition) Date Published April 2001 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
1998,1999
2SK3062
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 48 V VGS(on) = 10 V ID = 70 A IF = 70 A, VGS = 0 V IF = 70 A, VGS = 0 V di/dt = 100 A / s TEST CONDITIONS VDS = 60 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 35 A VGS = 10 V, ID = 35 A VGS = 4.0 V, ID = 35 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 30 V ,ID = 35 A VGS(on) = 10 V RG = 10 1.0 20 1.5 87 6.3 8.2 5200 1300 480 75 1150 360 480 95 13 30 0.97 70 140 8.5 12 MIN. TYP. MAX. 10 10 2.0 UNIT
A A
V S m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS VGS 0 50 L VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RL PG. RG VDD ID
90% 90%
VGS VGS
Wave Form
0
10%
VGS(on)
90%
IAS ID VDD
ID ID
Wave Form
0 10%
10%
= 1 s Duty Cycle 1%
td(on) ton
tr td(off)
toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 RL VDD
PG.
2
Data Sheet D13101EJ2V0DS
2SK3062
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
25 50 75 100 125 150 175 200
100 80 60 40 20
120 100 80 60 40 20 0 25 50 75 100 125 150 175 200
0
TC - Case Temperature - C
TC - Case Temperature - C
5
1000
FORWARD BIAS SAFE OPERATING AREA
ID(pulse)
PW
ID - Drain Current - A
100
d ite ) im 0 V )L on =1 S( S RD t VG (a
ID(DC)
1m s 10 ms 10 0m s DC
10 0 s
=1 0 s
10
Po Lim wer ite Dis d sip ati on
1 TC = 25C Single Pulse 1 10 100 VDS - Drain to Source Voltage - V
0.1 0.1
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A)= 83.3 C/W
10 Rth(ch-C)= 1.25 C/W 1
0.1
0.01 0.001 10 TC = 25C Single Pulse 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet D13101EJ2V0DS
3
2SK3062
FORWARD TRANSFER CHARACTERISTICS 100
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed
ID - Drain Current - A
10
ID - Drain Current - A
TA = 125C 75C 25C -25C
200
VGS = 10 V VGS = 4.0 V
1
100
0.1 Pulsed VDS = 10 V 4 5
0
1
2
3
0
1
2
3
4
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
100
Tch = -25C 25C 75C 125C
RDS(on) - Drain to Source On-state Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed
20
10
10 ID = 35 A
1 VDS = 10 V Pulsed 100
0.1
1.0
10
0
5
10
15
ID - Drain Current - A
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 30 Pulsed
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cut-off Voltage - V
2.0
VDS = 10 V ID = 1 mA
20
1.5
1.0
10
VGS = 4.0 V 10 V
0.5
0 0.1
0
1
10
100
1000
-50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet D13101EJ2V0DS
2SK3062
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 20 VGS = 4.0 V 15 10 V 10 100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
ISD - Diode Forward Current - A
VGS = 4.0 V 0V
10
1
5 ID = 35 A -50 0 50 100 150
0.1 Pulsed 0 0.5 1 1.5 VSD - Source to Drain Voltage - V
0
Tch - Channel Temperature - C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100
SWITCHING CHARACTERISTICS
Ciss, Coss, Crss - Capacitance - nF
td(on), tr, td(off), tf - Switching Time - ns
VGS = 0 V f = 1 MHz
10000
VDS = 30 V VGS = 10 V RG = 10
tr 1000 td(off) 100 td(on) tf
10 Ciss
1
Coss Crss
10 0.1 1 10 100
0.1 0.1
1
10
100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000
VDS - Drain to Source Voltage - V
60 VDD = 12 V 30 V 48 V
12 10 8 6
100
40
10
20
4 2
1 0.1
1
10
100
0
25
50
75
100
0
IF - Drain Current - A
QG - Gate Charge - nC
VGS - Gate to Source Voltage - V
trr - Reverse Recovery Time - ns
di/dt = 100 A /s VGS = 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80 16 ID = 70 A 14
Data Sheet D13101EJ2V0DS
5
2SK3062
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 160 IAS = 35 A 140
SINGLE AVALANCHE ENERGY DERATING FACTOR
VDD = 30 V RG = 25 VGS = 20 V 0 V IAS 35 A
IAS - Single Avalanche Current - A
EAS
10
Energy Derating Factor - %
10 m
=1
22.
120 100 80 60 40 20
5m
J
1.0 RG = 25 VDD = 30 V VGS = 20 V 0 V Starting Tch = 25 C 0.1 100 10
1m
0 25
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D13101EJ2V0DS
2SK3062
PACKAGE DRAWINGS (Unit : mm) 1)TO-220AB (MP-25)
3.00.3 10.6 MAX. 10.0 5.9 MIN. 15.5 MAX. 4.8 MAX.
2)TO-262 (MP-25 Fin Cut)
1.00.5
3.60.2
4.8 MAX. 1.30.2
1.30.2
(10) 4
1
2
3
4 123 6.0 MAX.
1.30.2
1.30.2
12.7 MIN.
12.7 MIN.
8.50.2
0.750.3 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
0.750.1 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
3)TO-263 (MP-25ZJ)
(10) 4
1.00.5 8.50.2
4) TO-220SMD(MP-25Z)
4.8 MAX. 1.30.2
Note
(10) 4
4.8 MAX. 1.30.2
1.00.5
5.70.4
1.10.4
3.00.5
8.50.2
(0 ) .5R R) 0.8 (
1.40.2 0.70.2 2.54 TYP. 1 2
(0
.5R
)
3 2.54 TYP.
(
R 0.8
)
1.40.2
0.50.2
1.00.3 2.54 TYP. 1 2
0.50.2
3 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
Note This Package is produced only in Japan.
EQUIVALENT CIRCUIT
Drain
Remark
Body Diode
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Gate
Gate Protection Diode
Source
Data Sheet D13101EJ2V0DS
2.80.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
7
2SK3062
* The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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